Semiconductor device with waveguide and method therefor

ABSTRACT

A method of manufacturing a semiconductor device is provided. The method includes forming an assembly including placing a semiconductor die and a launcher structure on a carrier substrate, encapsulating at least a portion of the semiconductor die and the launcher structure, and applying a redistribution layer on a surface of the semiconductor die and a surface of the launcher structure to connect a bond pad of the semiconductor die with an antenna launcher of the launcher structure. The assembly is attached to a substrate and a waveguide overlapping the assembly is attached to the substrate. The waveguide structure is physically decoupled from the assembly.

BACKGROUND Field

This disclosure relates generally to semiconductor device packaging, andmore specifically, to a semiconductor device with waveguide and methodof forming the same.

Related Art

Today, there is an increasing trend to include radar systems in vehiclessuch as automobiles, trucks, buses, and the like in order to provide adriver with enhanced awareness of objects around the driver's vehicle.As the vehicle approaches objects (e.g. other cars, pedestrians, andobstacles) or as objects approach the vehicle, a driver cannot alwaysdetect the object and perform intervention actions needed to avoid acollision with the object. An automotive radar system mounted on avehicle can detect the presence of objects including other vehicles inproximity to the vehicle and provide the driver with timely informationso that the driver can perform possible intervention actions. However,such automotive radar system can significantly impact the cost of thevehicle.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention is illustrated by way of example and is notlimited by the accompanying figures, in which like references indicatesimilar elements. Elements in the figures are illustrated for simplicityand clarity and have not necessarily been drawn to scale.

FIG. 1 through FIG. 4 illustrate, in a simplified cross-sectional view,an example semiconductor device with waveguide along line A-A of FIG. 5at stages of manufacture in accordance with an embodiment.

FIG. 5 illustrates, in a plan view, the example semiconductor devicewith waveguide at the stage of manufacture depicted in FIG. 4 inaccordance with an embodiment.

FIG. 6 and FIG. 7 illustrate, in a simplified cross-sectional view, analternative example semiconductor device with waveguide along line B-Bof FIG. 8 at stages of manufacture in accordance with an embodiment.

FIG. 8 illustrates, in a plan view, the example semiconductor devicewith waveguide at the stage of manufacture depicted in FIG. 7 inaccordance with an embodiment.

FIG. 9 through FIG. 11 illustrate, in a simplified cross-sectional view,an alternative example semiconductor device with waveguide along lineC-C of FIG. 12 at stages of manufacture in accordance with anembodiment.

FIG. 12 illustrates, in a plan view, the example semiconductor devicewith waveguide at the stage of manufacture depicted in FIG. 11 inaccordance with an embodiment.

FIG. 13 through FIG. 15 illustrate, in a simplified cross-sectionalview, an alternative example semiconductor device with waveguide alongline D-D of FIG. 16 at stages of manufacture in accordance with anembodiment.

FIG. 16 illustrates, in a plan view, the example semiconductor devicewith waveguide at the stage of manufacture depicted in FIG. 15 inaccordance with an embodiment.

DETAILED DESCRIPTION

Generally, there is provided, a semiconductor device including apackaged assembly with overlapping waveguide structure affixed to acommon substrate. The waveguide structure is physically decoupled fromthe packaged assembly. A semiconductor die and launcher structure areencapsulated on a package substrate to form the packaged assembly. Thewaveguide structure includes a waveguide opening over an antennalauncher of the launcher structure allowing propagation of radiofrequency (RF) signals. By having the overlapping waveguide structurephysically decoupled from the packaged assembly, package stress isreduced and reliability is improved while providing low loss RF signalperformance in a compact footprint.

FIG. 1 illustrates, in a simplified cross-sectional view, an exampleassembly of an example semiconductor device with waveguide 100 alongline A-A of FIG. 5 at a stage of manufacture in accordance with anembodiment. At this stage of manufacture, the assembly of semiconductordevice 100 includes a semiconductor die 102 and launcher structures 106and 108 placed on a carrier substrate 104.

In this embodiment, the launcher structures 106 and 108 are each formedas a multilayer laminate structure having a cavity (e.g., cavities 112and 114). For example, launcher structure 106 includes conductive layers122 and 130 (e.g., metal or other conductive material layers) separatedby a non-conductive material 120 (e.g., FR-4, ceramic). Contacts 124 andvias 126 provide conductive connections between terminal pads 132 at abottom surface of launcher structure 106 and conductive layers 122 and130. The cavity 112 includes an antenna launcher 116 located at a bottomsurface of the cavity 112. Likewise, the cavity 114 includes an antennalauncher 118 located at a bottom surface of the cavity 114. The antennalauncher 116 is connected to terminal pad 134 at the bottom surface oflauncher structure 106 by way of interconnecting contacts and via (e.g.,contacts 124, via 126). Via plugs 128 may be incorporated in vias 126 toprovide additional strength and rigidity. In this embodiment, conductivelayers 122 and interconnecting contacts 124 are configured and arrangedto serve as a conductive wall or fence substantially surrounding theantenna launcher 116. In some embodiments, it may be desirable toconnect the conductive wall or fence to a ground supply terminal orother supply terminal. In this embodiment, conductive layer 130 isconfigured and arranged to serve as a signal reflector located below theantenna launcher 116 and substantially surrounding the viainterconnecting the antenna launcher 116 with the terminal pad 134. Insome embodiments, it may be desirable to form the signal reflector on anext conductive layer immediately below the antenna launcher 116.

The semiconductor die 102 has an active surface (e.g., major surfacehaving circuitry) and a backside surface (e.g., major surface oppositeof the active surface). The semiconductor die 102 includes bond pads 110at the active surface configured for connection to antenna launchers 116and 118 by way of a redistribution layer (RDL), for example. Thesemiconductor die 102 may be formed from any suitable semiconductormaterial, such as silicon, germanium, gallium arsenide, gallium nitrideand the like. Semiconductor die 102 may further include any digitalcircuits, analog circuits, RF circuits, memory, signal processor, MEMS,sensors, the like, and combinations thereof.

FIG. 2 illustrates, in a simplified cross-sectional view, the exampleassembly at a subsequent stage of manufacture in accordance with anembodiment. At this stage of manufacture, the assembly of semiconductordevice 100 includes an encapsulant (e.g., epoxy material) 204 at leastpartially encapsulating semiconductor die 102 and launcher structures106 and 108 placed on the carrier substrate 104. In this embodiment, thesemiconductor die 102 and launcher structures 106 and 108 areover-molded with an epoxy material encapsulant by way of a film-assistedmolding (FAM) process. A FAM tool 202 is in contact with a top surfaceof the launcher structures 106 and 108 while molding to keeppredetermined portions (e.g., cavities 112 and 114) clear of encapsulant(e.g., not encapsulated).

FIG. 3 illustrates, in a simplified cross-sectional view, the exampleassembly at a subsequent stage of manufacture in accordance with anembodiment. At this stage of manufacture, the assembly 302 includes anencapsulant 204 at least partially encapsulating semiconductor die 102and launcher structures 106 and 108 along with an RDL substrate 304 andball connectors 310. After the carrier substrate 104 is removed, the RDLsubstrate 304 is applied to the resulting exposed bottom surfaceincluding an exposed active surface of the semiconductor die 102 andexposed bottom surfaces of the launcher structures 106 and 108.Conductive feeds 306 and 308 are formed in the RDL substrate 304 betweenbond pads 110 and terminal pads 134 to interconnect semiconductor die102 and antenna launchers 116 and 118 respectively. After the RDLsubstrate 304 is applied, conductive ball connectors 310 (e.g., solderballs) are affixed to a bottom surface of the RDL substrate 304. Theball connectors 310 are configured and arranged to provide conductiveconnections between the assembly 302 and a printed circuit board (PCB),for example. Ball connectors 310 may be any suitable conductivestructure such as solder ball, gold studs, copper pillars, and the like,to connect conductive features of the assembly 302 with the PCB. In thisembodiment, the RDL substrate 304 is formed as a build-up substrateincluding a redistribution layer. In some embodiments, the RDL substrate304 may be formed as a pre-formed substrate including a redistributionlayer. In other embodiments, ball connectors 310 may be directly affixedto terminal pads 132, 134 and bond pads 110 to provide connectivity witha PCB, for example, without utilizing an RDL substrate.

FIG. 4 illustrates, in a simplified cross-sectional view, the examplesemiconductor device with waveguide 100 along line A-A of FIG. 5 at astage of manufacture in accordance with an embodiment. At this stage ofmanufacture, the semiconductor device 100 includes the assembly 302 andoverlapping waveguide structure 402 affixed to a common substrate 404.With the assembly 302 and overlapping waveguide structure 402 affixed tothe substrate 404, the waveguide structure 402 is physically decoupledfrom the assembly 302. For example, the waveguide structure 402 does notphysically contact the assembly 302. In this embodiment, substrate 404may be characterized as a PCB or other multilayer substrate configuredto provide connectivity with other components of a system, for example.

The waveguide structure 402 includes waveguides 406 (e.g., waveguideopenings) and is attached to the substrate 404 at interface surfaces408. The waveguide structure 402 may be attached to the substrate 404 atinterface surfaces 408 using screws, alignment pins, adhesives, andcombinations thereof, for example. In this embodiment, the waveguidestructure 402 is formed from a conductive material such as a metal(e.g., aluminum, copper), non-conductive material coated with conductivematerial, other conductive materials, or combinations thereof.Waveguides 406 are formed as waveguide openings in the waveguidestructure 402 with antenna launchers 116 and 118 exposed through theopenings. In this embodiment, the waveguide openings 406 includesidewall portions 410 which extend downward into the cavities 112 and114 and substantially surrounding the antenna launchers 116 and 118respectively. Waveguides 406 dimensions (e.g., width, length) may beconfigured for propagation of signals (e.g., radar, mmWave signals, 30GHz to 300 GHz) having desired wavelengths. For example, a waveguide maybe configured for propagation (e.g., transmission) of a radar signalhaving a frequency of 77 GHz. Because a 77 GHz signal has a wavelengthof approximately 4 mm, the waveguide is configured having a widthdimension of approximately 2 mm, or half of the desired wavelength.

FIG. 5 illustrates, in a plan view, the example semiconductor devicewith waveguide 100 at the stage of manufacture depicted in FIG. 4 inaccordance with an embodiment. At this stage of manufacture, thesemiconductor device 100 includes the assembly (302) and overlappingwaveguide structure 402 affixed to a common substrate (404). Underlyingsemiconductor die 102 is shown as dashed outline labeled 102 forreference. Cross-sectional views of semiconductor device 100 taken alongline A-A including waveguides 406 are shown in example stages ofmanufacture depicted in FIG. 1 through FIG. 4. Waveguides 406 are formedas waveguide openings in the waveguide structure 402 with antennalaunchers 116 and 118 and non-conductive material 120 of launcherstructures 106 and 108 exposed through the respective openings.

FIG. 6 illustrates, in a simplified cross-sectional view, an exampleassembly of an example semiconductor device with waveguide 200 alongline B-B of FIG. 8 at a stage of manufacture in accordance with anembodiment. At this stage of manufacture, the assembly 600 includes anencapsulant 638 at least partially encapsulating semiconductor die 602and launcher structures 606 and 608 along with an RDL substrate 604 andball connectors 644. Conductive feeds 640 and 642 are formed in the RDLsubstrate 604 between bond pads 610 and terminal pads 634 tointerconnect semiconductor die 602 and antenna launchers 616 and 618respectively. Conductive ball connectors 644 (e.g., solder balls) areaffixed to a bottom surface of the RDL substrate 604. The ballconnectors 644 are configured and arranged to provide conductiveconnections between the assembly 600 and a PCB, for example. Ballconnectors 644 may be any suitable conductive structure such as solderballs, gold studs, copper pillars, and the like, to connect conductivefeatures of the assembly 600 with the PCB. In this embodiment, the RDLsubstrate 604 is formed as a build-up substrate including aredistribution layer. In some embodiments, the RDL substrate 604 may beformed as a pre-formed substrate including a redistribution layer. Inother embodiments, ball connectors 644 may be directly affixed toterminal pads 632-634 and bond pads 610 to provide connectivity with aPCB, for example, without utilizing an RDL substrate.

In this embodiment, the launcher structures 606 and 608 are each formedas a multilayer laminate structure having a cavity (e.g., cavities 612and 614). For example, launcher structure 606 includes conductive layers622 (e.g., metal or other conductive material layers) separated by anon-conductive material 620 (e.g., FR-4, ceramic). Contacts 624 and vias625 provide conductive connections between terminal pads 632 at a bottomsurface of launcher structure 606 and conductive layers 622. The cavity612 includes an antenna launcher 616 and surrounding conductive pad 630located at a bottom surface of the cavity 612. Likewise, the cavity 614includes an antenna launcher 618 and surrounding conductive pad locatedat a bottom surface of the cavity 614. A conductive ring 626 is attachedto the conductive pad 630 by way of a conductive connector 628 (e.g.,solder, electrically conductive adhesive, anisotropic conductive film).A channel 636 is formed in the cavity 612 between outer sidewall of theconductive ring 626 and sidewall of cavity 612. The antenna launcher 616is connected to terminal pad 634 at the bottom surface of launcherstructure 606 by way of interconnecting contacts and via. In thisembodiment, conductive layers 622 and interconnecting contacts 624 areconfigured and arranged to serve as a conductive wall or fencesubstantially surrounding the sidewall of cavity 612. In someembodiments, it may be desirable to connect the conductive wall or fenceto a ground supply terminal or other supply terminal.

The semiconductor die 602 has an active surface (e.g., major surfacehaving circuitry) and a backside surface (e.g., major surface oppositeof the active surface). The semiconductor die 602 includes bond pads 610at the active surface configured for connection to antenna launchers 616and 618 by way of an RDL, for example. The semiconductor die 602 may beformed from any suitable semiconductor material, such as silicon,germanium, gallium arsenide, gallium nitride and the like. Semiconductordie 602 may further include any digital circuits, analog circuits, RFcircuits, memory, signal processor, MEMS, sensors, the like, andcombinations thereof.

FIG. 7 illustrates, in a simplified cross-sectional view, the examplesemiconductor device 200 along line B-B of FIG. 8 at a stage ofmanufacture in accordance with an embodiment. At this stage ofmanufacture, the semiconductor device 200 includes the assembly 600 andoverlapping waveguide structure 702 affixed to a common substrate 704.With the assembly 600 and overlapping waveguide structure 702 affixed tothe substrate 704, the waveguide structure 702 is physically decoupledfrom the assembly 600. For example, the waveguide structure 702 does notphysically contact the assembly 600. In this embodiment, substrate 704may be characterized as a PCB or other multilayer substrate configuredto provide connectivity with other components of a system, for example.

The waveguide structure 702 includes waveguides 706 (e.g., waveguideopenings) and is attached to the substrate 704 at interface surfaces708. The waveguide structure 702 may be attached to the substrate 704 atinterface surfaces 708 using screws, alignment pins, adhesives, andcombinations thereof, for example. In this embodiment, the waveguidestructure 702 is formed from a conductive material such as a metal(e.g., aluminum, copper), other conductive materials, or combinationsthereof. Waveguides 706 are formed as waveguide openings in thewaveguide structure 702 with antenna launchers 616 and 618 exposedthrough the openings. In this embodiment, the waveguide openings 706include sidewall portions 710 which extend downward into the channels636 formed in the cavities 612 and 614 between outer sidewall of theconductive rings 626 and sidewall of cavities 612 and 614 respectively.Waveguides 706 dimensions (e.g., width, length) may be configured forpropagation of signals (e.g., radar, mmWave signals, 30 GHz to 300 GHz)having desired wavelengths.

FIG. 8 illustrates, in a plan view, the example semiconductor devicewith waveguide 200 at the stage of manufacture depicted in FIG. 7 inaccordance with an embodiment. At this stage of manufacture, thesemiconductor device 200 includes the assembly (600) and overlappingwaveguide structure 702 affixed to a common substrate (704). Underlyingsemiconductor die 602 is shown as dashed outline labeled 602 forreference. Cross-sectional views of semiconductor device with waveguide200 taken along line B-B including waveguides 706 are shown in examplestages of manufacture depicted in FIG. 7 and FIG. 8. Waveguides 706 areformed as waveguide openings in the waveguide structure 702 with antennalaunchers 616 and 618, conductive rings 626, and non-conductive material620 of launcher structures 606 and 608 exposed through the respectiveopenings.

FIG. 9 illustrates, in a simplified cross-sectional view, an exampleassembly of an example semiconductor device with waveguide 300 alongline C-C of FIG. 12 at a stage of manufacture in accordance with anembodiment. At this stage of manufacture, the assembly of semiconductordevice 300 includes an encapsulant (e.g., epoxy material) 928encapsulating semiconductor die 902 and launcher structures 906 and 908placed on the carrier substrate 904. In this embodiment, thesemiconductor die 902 and launcher structures 906 and 908 areover-molded with an epoxy material encapsulant.

In this embodiment, the launcher structures 906 and 908 are formed aslaminate structures having antenna launcher 914 and 916 located at a topsurface of launcher structures 906 and 908 respectively. For example,the launcher structure 906 includes conductive interconnects 918 and 920(e.g., metal or other conductive materials) separated by anon-conductive material 912 (e.g., FR-4, ceramic). Conductiveinterconnect 918 provides conductive connections between terminal pads922 at a bottom surface of launcher structure 906 and conductive ballconnectors 926 (e.g., solder balls). The antenna launcher 914 isconnected to terminal pad 924 at the bottom surface of launcherstructure 906 by way of conductive interconnect 920. Conductiveinterconnect 918 and conductive ball connectors 926 are configured andarranged to substantially surround antennal launcher 914 and conductiveinterconnect 920.

The semiconductor die 902 has an active surface (e.g., major surfacehaving circuitry) and a backside surface (e.g., major surface oppositeof the active surface). The semiconductor die 902 includes bond pads 910at the active surface configured for connection to antenna launchers 914and 916 by way of an RDL, for example. The semiconductor die 902 may beformed from any suitable semiconductor material, such as silicon,germanium, gallium arsenide, gallium nitride and the like. Semiconductordie 902 may further include any digital circuits, analog circuits, RFcircuits, memory, signal processor, MEMS, sensors, the like, andcombinations thereof.

FIG. 10 illustrates, in a simplified cross-sectional view, the exampleassembly at a subsequent stage of manufacture in accordance with anembodiment. At this stage of manufacture, the assembly 1000 includes theencapsulant 928 at least partially encapsulating semiconductor die 902and launcher structures 906 and 908 along with an RDL substrate 1004 andball connectors 1016.

In this embodiment, a backside grind operation is performed on theassembly 1000 to expose portions of ball connectors 926 of launcherstructures 906 and 908 and a backside surface of semiconductor die 902.A conductive ring 1008 is attached to a conductive path formed by theexposed a portions of ball connectors 926 by way of a conductiveconnector 1006 (e.g., solder, electrically conductive adhesive,anisotropic conductive film). The conductive ring 1008 is configured andarranged to serve as a conductive wall or fence substantiallysurrounding the antenna launcher 914 and forming a cavity 1010.Likewise, a conductive ring substantially surrounds the antenna launcher916 and forms a cavity 1012. In some embodiments, it may be desirable toconnect the conductive walls or fences to a ground supply terminal orother supply terminal.

After the carrier substrate 904 is removed, the RDL substrate 1004 isapplied to the resulting exposed bottom surface including an exposedactive surface of the semiconductor die 902 and exposed bottom surfacesof the launcher structures 906 and 908. Conductive feeds 1014 are formedin the RDL substrate 1004 between bond pads 910 and terminal pads 924 tointerconnect semiconductor die 902 and antenna launchers 914 and 916respectively. After the RDL substrate 1004 is applied, conductive ballconnectors 1016 (e.g., solder balls) are affixed to a bottom surface ofthe RDL substrate 1004. The ball connectors 1016 are configured andarranged to provide conductive connections between the assembly 1000 anda printed circuit board (PCB), for example. Ball connectors 1016 may beany suitable conductive structure such as solder ball, gold studs,copper pillars, and the like, to connect conductive features of theassembly 1000 with the PCB. In this embodiment, the RDL substrate 1004is formed as a build-up substrate including a redistribution layer. Insome embodiments, the RDL substrate 1004 may be formed as a pre-formedsubstrate including a redistribution layer. In other embodiments, ballconnectors 1016 may be directly affixed to terminal pads 922, 924 andbond pads 910 to provide connectivity with a PCB, for example, withoututilizing an RDL substrate.

FIG. 11 illustrates, in a simplified cross-sectional view, the examplesemiconductor device with waveguide 300 along line C-C of FIG. 12 at astage of manufacture in accordance with an embodiment. At this stage ofmanufacture, the semiconductor device with waveguide 300 includes theassembly 1000 and overlapping waveguide structure 1102 affixed to acommon substrate 1104. With the assembly 1000 and overlapping waveguidestructure 1102 affixed to the substrate 1104, the waveguide structure1102 is physically decoupled from the assembly 1000. For example, thewaveguide structure 1102 does not physically contact the assembly 1000.In this embodiment, substrate 1104 may be characterized as a PCB orother multilayer substrate configured to provide connectivity with othercomponents of a system, for example.

The waveguide structure 1102 includes waveguides 1106 (e.g., waveguideopenings) and is attached to the substrate 1104 at interface surfaces1108. The waveguide structure 1102 may be attached to the substrate 1104at interface surfaces 1108 using screws, alignment pins, adhesives, andcombinations thereof, for example. In this embodiment, the waveguidestructure 1102 is formed from a conductive material such as a metal(e.g., aluminum, copper), other conductive materials, or combinationsthereof. Waveguides 1106 are formed as waveguide openings in thewaveguide structure 1102 with conductive rings 1008 and a surface ofencapsulant 928 over antenna launchers 914 and 916 exposed through theopenings. In this embodiment, the waveguide openings 1106 are configuredand arranged to substantially surround the conductive ringssubstantially surrounding antenna launchers 914 and 916. For example,waveguide 1106 include sidewalls 1110 which surround outer sidewalls ofthe conductive ring 1008. Waveguides 1106 dimensions (e.g., width,length) may be configured for propagation of signals (e.g., radar,mmWave signals, 30 GHz to 300 GHz) having desired wavelengths.

FIG. 12 illustrates, in a plan view, the example semiconductor devicewith waveguide 300 at the stage of manufacture depicted in FIG. 11 inaccordance with an embodiment. At this stage of manufacture, thesemiconductor device 300 includes the assembly (1000) and overlappingwaveguide structure 1102 affixed to a common substrate (1104).Underlying semiconductor die 902 is shown as dashed outline labeled 902for reference. Cross-sectional views of semiconductor device 300 takenalong line C-C including waveguides 1106 are shown in example stages ofmanufacture depicted in FIG. 9 through FIG. 11. Waveguides 1106 areformed as waveguide openings in the waveguide structure 1102 withconductive rings 1008 and encapsulant 928 over antenna launchers (914and 916) exposed through the respective openings.

FIG. 13 illustrates, in a simplified cross-sectional view, an exampleassembly of an example semiconductor device with waveguide 400 alongline D-D of FIG. 16 at a stage of manufacture in accordance with anembodiment. At this stage of manufacture, the assembly of semiconductordevice 400 includes an encapsulant (e.g., epoxy material) 1328encapsulating semiconductor die 1302 and launcher structures 1306 and1308 placed on the carrier substrate 1304. In this embodiment, thesemiconductor die 1302 and launcher structures 1306 and 1308 areover-molded with an epoxy material encapsulant.

In this embodiment, the launcher structures 1306 and 1308 are formed aslaminate structures having antenna launcher 1314 and 1316 located at atop surface of launcher structures 1306 and 1308 respectively. Forexample, the launcher structure 1306 includes conductive interconnects1318 and 1320 (e.g., metal or other conductive materials) separated by anon-conductive material 1312 (e.g., FR-4, ceramic). Conductiveinterconnect 1318 provides conductive connections between terminal pads1322 at a bottom surface of launcher structure 1306 and conductive ballconnectors 1326 (e.g., solder balls). The antenna launcher 1314 isconnected to terminal pad 1324 at the bottom surface of launcherstructure 1306 by way of conductive interconnect 1320. Conductiveinterconnect 1318 and conductive ball connectors 1326 are configured andarranged to substantially surround antennal launcher 1314 and conductiveinterconnect 1320.

The semiconductor die 1302 has an active surface (e.g., major surfacehaving circuitry) and a backside surface (e.g., major surface oppositeof the active surface). The semiconductor die 1302 includes bond pads1310 at the active surface configured for connection to antennalaunchers 1314 and 1316 by way of an RDL, for example. The semiconductordie 1302 may be formed from any suitable semiconductor material, such assilicon, germanium, gallium arsenide, gallium nitride and the like.Semiconductor die 1302 may further include any digital circuits, analogcircuits, RF circuits, memory, signal processor, MEMS, sensors, thelike, and combinations thereof.

FIG. 14 illustrates, in a simplified cross-sectional view, the exampleassembly at a subsequent stage of manufacture in accordance with anembodiment. At this stage of manufacture, the assembly 1400 includes theencapsulant 1328 at least partially encapsulating semiconductor die 1302and launcher structures 1306 and 1308 along with an RDL substrate 1404and ball connectors 1418.

In this embodiment, a backside grind operation is performed on theassembly 1400 to expose portions of ball connectors 1326 launcherstructures 1306 and 1308 and a backside surface of semiconductor die1302. A conductive ring 1408 is formed as a conductive layer (e.g.,metal or other conductive material) on sidewalls of an opening in anon-conductive substrate 1410. The conductive ring 1408 is attached tothe exposed a portions of ball connectors 1326 by way of a conductiveconnector 1406 (e.g., solder, electrically conductive adhesive,anisotropic conductive film). The conductive ring 1408 is configured andarranged to serve as a conductive wall or fence substantiallysurrounding the antenna launcher 1314 and forming a cavity 1412.Likewise, a conductive ring substantially surrounds the antenna launcher1316 and forms a cavity 1414. In some embodiments, it may be desirableto connect the conductive walls or fences to a ground supply terminal orother supply terminal.

After the carrier substrate 1304 is removed, the RDL substrate 1404 isapplied to the resulting exposed bottom surface including an exposedactive surface of the semiconductor die 1302 and exposed bottom surfacesof the launcher structures 1306 and 1308. Conductive feeds 1416 areformed in the RDL substrate 1404 between bond pads 1310 and terminalpads 1324 to interconnect semiconductor die 1302 and antenna launchers1314 and 1316 respectively. After the RDL substrate 1404 is applied,conductive ball connectors 1418 (e.g., solder balls) are affixed to abottom surface of the RDL substrate 1404. The ball connectors 1418 areconfigured and arranged to provide conductive connections between theassembly 1400 and a printed circuit board (PCB), for example. Ballconnectors 1418 may be any suitable conductive structure such as solderball, gold studs, copper pillars, and the like, to connect conductivefeatures of the assembly 1400 with the PCB. In this embodiment, the RDLsubstrate 1404 is formed as a build-up substrate including aredistribution layer. In some embodiments, the RDL substrate 1404 may beformed as a pre-formed substrate including a redistribution layer. Inother embodiments, ball connectors 1418 may be directly affixed toterminal pads 1322, 1324 and bond pads 1310 to provide connectivity witha PCB, for example, without utilizing an RDL substrate.

FIG. 15 illustrates, in a simplified cross-sectional view, the examplesemiconductor device with waveguide 400 along line D-D of FIG. 16 at astage of manufacture in accordance with an embodiment. At this stage ofmanufacture, the semiconductor device with waveguide 400 includes theassembly 1400 and overlapping waveguide structure 1502 affixed to acommon substrate 1504. With the assembly 1400 and overlapping waveguidestructure 1502 affixed to the substrate 1504, the waveguide structure1502 is physically decoupled from the assembly 1400. For example, thewaveguide structure 1502 does not physically contact the assembly 1400.In this embodiment, substrate 1504 may be characterized as a PCB orother multilayer substrate configured to provide connectivity with othercomponents of a system, for example.

The waveguide structure 1502 includes waveguides 1506 (e.g., waveguideopenings) and is attached to the substrate 1504 at interface surfaces1508. The waveguide structure 1502 may be attached to the substrate 1504at interface surfaces 1508 using screws, alignment pins, adhesives, andcombinations thereof, for example. In this embodiment, the waveguidestructure 1502 is formed from a conductive material such as a metal(e.g., aluminum, copper), other conductive materials, or combinationsthereof. Waveguides 1506 are formed as waveguide openings in thewaveguide structure 1502 with a surface of encapsulant 1328 over antennalaunchers 1314 and 1316 exposed through the openings. In thisembodiment, the waveguide openings 1506 include sidewall portions 1510which extend downward into the cavities 1412 and 1414 and substantiallysurrounding the antenna launchers 1314 and 1316 respectively. Waveguides1506 dimensions (e.g., width, length) may be configured for propagationof signals (e.g., radar, mmWave signals, 30 GHz to 300 GHz) havingdesired wavelengths.

FIG. 16 illustrates, in a plan view, the example semiconductor devicewith waveguide 400 at the stage of manufacture depicted in FIG. 15 inaccordance with an embodiment. At this stage of manufacture, thesemiconductor device with waveguide 400 includes the assembly (1400) andoverlapping waveguide structure 1502 affixed to a common substrate(1404). Underlying semiconductor die 1302 is shown as dashed outlinelabeled 1302 for reference. Cross-sectional views of semiconductordevice with waveguide 400 taken along line D-D including waveguides 1506are shown in example stages of manufacture depicted in FIG. 13 throughFIG. 15. Waveguides 1506 are formed as waveguide openings in thewaveguide structure 1502 with encapsulant 1328 over antenna launchers(1314 and 1316) exposed through the respective openings.

Generally, there is provided, a method of manufacturing a manufacturinga semiconductor device, the method including forming an assemblyincluding placing a semiconductor die and a launcher structure on acarrier substrate, the launcher structure including an antenna launcher;encapsulating at least a portion of the semiconductor die and thelauncher structure; applying a redistribution layer on a first majorsurface of the semiconductor die and a first major surface of thelauncher structure, a bond pad of the semiconductor die connected by wayof the redistribution layer to the antenna launcher; attaching theassembly to a substrate; and attaching a waveguide structure to thesubstrate, the waveguide structure overlapping the assembly andphysically decoupled from the assembly. The launcher structure may beformed having a cavity, the antenna launcher located at a bottom surfaceof the cavity. The attaching the waveguide structure to the substratemay further include extending sidewalls of an opening in the waveguidestructure into the cavity to substantially surround the antennalauncher. The dimensions of the opening in the waveguide structure maybe configured for propagation of a mmWave signal. The method may furtherinclude forming a conductive ring structure substantially surround theantenna launcher, outer sidewalls of the conductive ring structurespaced from sidewalls of the cavity to form a channel between theconductive ring structure and sidewalls of the cavity. The attaching thewaveguide structure to the substrate may further include extendingsidewalls of an opening in the waveguide structure into the channelformed between the conductive ring structure and the sidewalls of thecavity. The method may further include back-grinding the assembly toexpose a conductive path substantially surrounding the antenna launcher;and attaching a conductive ring structure onto the exposed conductivepath. The attaching the waveguide structure to the substrate may furtherinclude extending sidewalls of an opening in the waveguide structure tosubstantially surround the conductive ring structure. The attaching thewaveguide structure to the substrate may further include extendingsidewalls of an opening in the waveguide structure to substantiallysurround the antenna launcher, the conductive ring structure surroundingthe extended sidewall of the opening.

In another embodiment, there is provided, a semiconductor deviceincluding a printed circuit board (PCB) having a topside surface; apackaged assembly attached to the PCB at the topside surface, thepackaged assembly including a package substrate having a first majorsurface and a second major surface; a semiconductor die having an activesurface and a backside surface, the semiconductor die attached to thepackage substrate at the first major surface; a launcher structureattached to the package substrate at the first major surface, thelauncher structure including an antenna launcher coupled to thesemiconductor die by way of the package substrate; and an epoxy materialencapsulating at least a portion of the semiconductor die and thelauncher structure; and a waveguide structure attached to the PCB at thetopside surface, the waveguide structure overlapping the packagedassembly and physically decoupled from the packaged assembly. Thepackage substrate may be characterized as a build-up substrate includinga redistribution layer configured to couple a bond pad on the activesurface of the semiconductor die with the antenna launcher. Thewaveguide structure may be configured and arranged for propagation of ammWave signal. The launcher structure may be formed having a cavity, theantenna launcher located at a bottom surface of the cavity. Thewaveguide structure may include a waveguide opening having sidewallportions extended into the cavity and substantially surrounding theantenna launcher. The launcher structure may further include aconductive ring structure substantially surrounding the antennalauncher, outer sidewalls of the conductive ring structure spaced fromsidewalls of the cavity to form a channel between the conductive ringstructure and sidewalls of the cavity. The waveguide structure mayinclude a waveguide opening having sidewall portions extended into thechannel formed between the conductive ring structure and the sidewallsof the cavity.

In yet another embodiment, there is provided, a semiconductor deviceincluding a printed circuit board (PCB) having a topside surface; apackaged semiconductor device attached to the PCB at the topsidesurface, the packaged semiconductor device including a package substratehaving a first major surface and a second major surface; a semiconductordie having an active surface and a backside surface, the semiconductordie attached to the package substrate at the first major surface; alauncher structure attached to the package substrate at the first majorsurface, the launcher structure including an antenna launcher coupled tothe semiconductor die by way a conductive feed of the package substrate;and an epoxy material encapsulating at least a portion of thesemiconductor die and the launcher structure; and a waveguide structureattached to the PCB at the topside surface, the waveguide structureoverlapping the packaged semiconductor device, a waveguide opening ofthe waveguide structure having sidewalls substantially surrounding theantenna launcher, the waveguide structure physically decoupled from thepackaged semiconductor device. The launcher structure may be formedhaving a cavity, the antenna launcher located at a bottom surface of thecavity. The sidewall portions of the waveguide opening may extend intothe cavity and substantially surround the antenna launcher. The launcherstructure may further include a conductive ring structure substantiallysurrounding the antenna launcher and spaced from sidewalls of the cavityto form a channel between the conductive ring structure and sidewalls ofthe cavity, sidewall portions of the waveguide opening extend into thechannel formed between the conductive ring structure and the sidewallsof the cavity.

By now, it should be appreciated that there has been provided asemiconductor device including a packaged assembly with overlappingwaveguide structure affixed to a common substrate. The waveguidestructure is physically decoupled from the packaged assembly. Asemiconductor die and launcher structure are encapsulated on a packagesubstrate to form the packaged assembly. The waveguide structureincludes a waveguide opening over an antenna launcher of the launcherstructure allowing propagation of radio frequency (RF) signals. Byhaving the overlapping waveguide structure physically decoupled from thepackaged assembly, package stress is reduced and reliability is improvedwhile providing low loss RF signal performance in a compact footprint.

The terms “front,” “back,” “top,” “bottom,” “over,” “under” and the likein the description and in the claims, if any, are used for descriptivepurposes and not necessarily for describing permanent relativepositions. It is understood that the terms so used are interchangeableunder appropriate circumstances such that the embodiments of theinvention described herein are, for example, capable of operation inother orientations than those illustrated or otherwise described herein.

Although the invention is described herein with reference to specificembodiments, various modifications and changes can be made withoutdeparting from the scope of the present invention as set forth in theclaims below. Accordingly, the specification and figures are to beregarded in an illustrative rather than a restrictive sense, and allsuch modifications are intended to be included within the scope of thepresent invention. Any benefits, advantages, or solutions to problemsthat are described herein with regard to specific embodiments are notintended to be construed as a critical, required, or essential featureor element of any or all the claims.

Furthermore, the terms “a” or “an,” as used herein, are defined as oneor more than one. Also, the use of introductory phrases such as “atleast one” and “one or more” in the claims should not be construed toimply that the introduction of another claim element by the indefinitearticles “a” or “an” limits any particular claim containing suchintroduced claim element to inventions containing only one such element,even when the same claim includes the introductory phrases “one or more”or “at least one” and indefinite articles such as “a” or “an.” The sameholds true for the use of definite articles.

Unless stated otherwise, terms such as “first” and “second” are used toarbitrarily distinguish between the elements such terms describe. Thus,these terms are not necessarily intended to indicate temporal or otherprioritization of such elements.

What is claimed is:
 1. A method of manufacturing a semiconductor device,the method comprising: forming an assembly comprising: placing asemiconductor die and a launcher structure on a carrier substrate, thelauncher structure including an antenna launcher; encapsulating at leasta portion of the semiconductor die and the launcher structure; applyinga redistribution layer on a first major surface of the semiconductor dieand a first major surface of the launcher structure, a bond pad of thesemiconductor die connected by way of the redistribution layer to theantenna launcher; attaching the assembly to a substrate; and attaching awaveguide structure to the substrate, the waveguide structureoverlapping the assembly and physically decoupled from the assembly. 2.The method of claim 1, wherein the launcher structure is formed having acavity, the antenna launcher located at a bottom surface of the cavity.3. The method of claim 2, wherein attaching the waveguide structure tothe substrate further includes extending sidewalls of an opening in thewaveguide structure into the cavity to substantially surround theantenna launcher.
 4. The method of claim 3, wherein dimensions of theopening in the waveguide structure are configured for propagation of ammWave signal.
 5. The method of claim 2, further comprising forming aconductive ring structure substantially surround the antenna launcher,outer sidewalls of the conductive ring structure spaced from sidewallsof the cavity to form a channel between the conductive ring structureand sidewalls of the cavity.
 6. The method of claim 5, wherein attachingthe waveguide structure to the substrate further includes extendingsidewalls of an opening in the waveguide structure into the channelformed between the conductive ring structure and the sidewalls of thecavity.
 7. The method of claim 1, further comprising: back-grinding theassembly to expose a conductive path substantially surrounding theantenna launcher; and attaching a conductive ring structure onto theexposed conductive path.
 8. The method of claim 7, wherein attaching thewaveguide structure to the substrate further includes extendingsidewalls of an opening in the waveguide structure to substantiallysurround the conductive ring structure.
 9. The method of claim 7,wherein attaching the waveguide structure to the substrate furtherincludes extending sidewalls of an opening in the waveguide structure tosubstantially surround the antenna launcher, the conductive ringstructure surrounding the extended sidewall of the opening.
 10. Asemiconductor device comprising: a printed circuit board (PCB) having atopside surface; a packaged assembly attached to the PCB at the topsidesurface, the packaged assembly comprising: a package substrate having afirst major surface and a second major surface; a semiconductor diehaving an active surface and a backside surface, the semiconductor dieattached to the package substrate at the first major surface; a launcherstructure attached to the package substrate at the first major surface,the launcher structure including an antenna launcher coupled to thesemiconductor die by way of the package substrate; and an epoxy materialencapsulating at least a portion of the semiconductor die and thelauncher structure; and a waveguide structure attached to the PCB at thetopside surface, the waveguide structure overlapping the packagedassembly and physically decoupled from the packaged assembly.
 11. Thesemiconductor device of claim 10, wherein the package substrate ischaracterized as a build-up substrate comprising a redistribution layerconfigured to couple a bond pad on the active surface of thesemiconductor die with the antenna launcher.
 12. The semiconductordevice of claim 10, wherein the waveguide structure is configured andarranged for propagation of a mmWave signal.
 13. The semiconductordevice of claim 10, wherein the launcher structure is formed having acavity, the antenna launcher located at a bottom surface of the cavity.14. The semiconductor device of claim 13, wherein the waveguidestructure includes a waveguide opening having sidewall portions extendedinto the cavity and substantially surrounding the antenna launcher. 15.The semiconductor device of claim 13, wherein the launcher structurefurther includes a conductive ring structure substantially surroundingthe antenna launcher, outer sidewalls of the conductive ring structurespaced from sidewalls of the cavity to form a channel between theconductive ring structure and sidewalls of the cavity.
 16. Thesemiconductor device of claim 15, wherein the waveguide structureincludes a waveguide opening having sidewall portions extended into thechannel formed between the conductive ring structure and the sidewallsof the cavity.
 17. A semiconductor device comprising: a printed circuitboard (PCB) having a topside surface; a packaged semiconductor deviceattached to the PCB at the topside surface, the packaged semiconductordevice comprising: a package substrate having a first major surface anda second major surface; a semiconductor die having an active surface anda backside surface, the semiconductor die attached to the packagesubstrate at the first major surface; a launcher structure attached tothe package substrate at the first major surface, the launcher structureincluding an antenna launcher coupled to the semiconductor die by way aconductive feed of the package substrate; and an epoxy materialencapsulating at least a portion of the semiconductor die and thelauncher structure; and a waveguide structure attached to the PCB at thetopside surface, the waveguide structure overlapping the packagedsemiconductor device, a waveguide opening of the waveguide structurehaving sidewalls substantially surrounding the antenna launcher, thewaveguide structure physically decoupled from the packaged semiconductordevice.
 18. The semiconductor device of claim 17, wherein the launcherstructure is formed having a cavity, the antenna launcher located at abottom surface of the cavity.
 19. The semiconductor device of claim 18,wherein sidewall portions of the waveguide opening extend into thecavity and substantially surround the antenna launcher.
 20. Thesemiconductor device of claim 18, wherein the launcher structure furtherincludes a conductive ring structure substantially surrounding theantenna launcher and spaced from sidewalls of the cavity to form achannel between the conductive ring structure and sidewalls of thecavity, sidewall portions of the waveguide opening extend into thechannel formed between the conductive ring structure and the sidewallsof the cavity.